Anisotropic intrinsic anomalous Hall effect in epitaxial Fe films on GaAs(111)

The anomalous Hall effect (AHE) in epitaxial Fe films on GaAs(111) has been investigated as a function of film thickness and temperature. The intrinsic contribution from the Berry curvature is singled out from the extrinsic ones and determined to be 821 −1 cm−1, which agrees to the theoretical prediction of 842 −1 cm−1 and is considerably smaller than 1100 −1 cm−1 for Fe(001). This result provides a direct experimental evidence for the anisotropy of the intrinsic AHE in single crystal Fe, reflecting its electronic band structure.